Cleanroom Reports

• List of etch and deposit rate for cleanroom tools. Each file includes the recipe being used and the calibrated etch rate.
• Please update yours if you run any calibration so that everyone can keep track of them.
• Wet etch recipes:

http://www.cleanroom.byu.edu/wet_etch.phtml

http://terpconnect.umd.edu/~browns/wetetch.html

http://140.120.11.121/~vincent/tools/etch/wetchemicaletch.php

• Dry etch recipes:

http://www.tnw.tudelft.nl/over-faculteit/afdelingen/quantum-nanoscience/medewerkers/onderzoeksgroepen/kavli-nanolab-delft/facility/process-recipes/dry-etch-recipes/

• Refractive indexes:

http://refractiveindex.info/

Dry Etch

Etched material	Equipment	Substrate	Recipe	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Si	ICP#2	SOI	Bowers si etch # 127	4nm/s	JUN 12, 2010	Jon Peters	ICP#2 si etch rate	40/20sccm BCl3/Cl2, 500/120W ICP/RF, 2.5Pa
SiO2	ICP#2	SOI	SiOxVert, recipe #101	~252nm/min	NOV 9, 2010;	Molly	Media:SiO2_Vert.pdf	40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN	ICP#2	SOI	SiOxVert, recipe #101	~300nm/min		Geza		40sccm CHF3, 900/200W ICP/RF, 0.5Pa
SiN PE-CVD	RIE#2	SOI	MHA, 4/20/10	See note	Sept 26, 2011;	JonP		Methane/Hydrogen/Ar, 500V, , 75mT. Polymer buildup on SiN during the etch. Etch delta not seen post 10 min 02 300W 125mT plasma in RIE2.
Cured SU8 (260 C for 30 min)	ICP#2	SOI	Bowers SiOxVert etch # 101	~111 nm/min	MAY 27, 2010	Geza
PECVD#1 SiO2	ICP#2		nano etch # 104	~60nm/min	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5 Pa
PECVD#1 SiO2	ICP#2		GC-SiN # 181	~80-100nm/min	Nov 1, 2013	Jon P		CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etch rate mostly ~83nm/min but one flyer at 97 nm/min
SPR 220 3um	ICP#2		GC-SiN # 181	~184nm/min	Nov 1, 2013	Jon P		CF4/O2 50/5 sccm 500/25W 2.0 Pa. Etched for 4 min (2 min plus 2 min) SPR baked at 110C for 2 min pre expose and post expose. Plasma for 1 min prior to etch. Initial resist thickness 2.5 um
Si3N4	ICP#2		nano etch # 104	~140nm/min	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
UV-6	ICP#2		nano etch # 104	~120nm/min	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
SPR955-0.9CM	ICP#2		nano etch # 104	???	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
DSK-101	ICP#2		nano etch # 104	~142nm/min	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cr	ICP#2		nano etch # 104	negligible	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
ZEP or 2:1 ZEP:Anisol	ICP#2		nano etch # 104	~142nm/min	MAY 27, 2012	Jock	media:ICP2_CF4-CHF3-O2_Deep_Nano_Etch.pptx	Low polymer build up on this etch allows small features. CF4/CHF3/O2 5/35/10sccm 500/50W 0.5Pa
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W)	~275 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (200W + 40 sccm O2)	~465 nm/min	JUN 1, 2010	Geza
Cured SU8 (260 C for 30 min)	ICP#2	SOI	aSi SF6 based etch # 156 (300W + 40 sccm O2)	~690 nm/min	JUN 1, 2010	Geza		Use cured (115C/15min) SPR220-7 as mask, mask etched at ~550nm/min. Carefully check mask for cracking.
Cured BCB (250 C for 60 min)	ICP#1	SOI	CF4 based etch # 308 (1000W + 50:200 sccm CF4:O2)	~400 nm/min	JUN 1, 2012	Jared H
SiO2 and Si	ICP#2	Si	SF6-O2 ICP2 #124	280-360nm/m	JUN 08, 2012	Jon Peters	media:20120608_SF6_Silicon_etch.pptx	30/10sccm SF6/O2, 400/50W ICP/RF, 1.0 Pa
Sputtered W	ICP#1/2	Si	SF6-Ar, #197/#174 ICP#1/2)	~70 nm/m	NOV 02, 2012	Geza		Rodwell recipe (Johann): 5/5 sccm SF6/Ar, 600/20W ICP/RF, selectivity to InGaAs > 10:1

Wet Etch

Etched material	Solution	Mask	Latest etch rate	Latest update date	Latest update by	Calib. file	Note
Thermal oxide	BHF	PR or dielectric	~100nm/min
PECVD oxide	BHF	PR or dielectric	~225nm/min
PECVD SiN	BHF		~30-50nm/min		Jon P.
PECVD SiN	HF		~500nm/min		Geza		PR does not survive as a mask
Cured SU8 (260 C for 30 min)	Piranha (150mL H2SO4 + 50mL H2O2)		~500nm/s (v. fast)	MAY 27, 2010	Geza		Piranha does not attack SiN or Gold, suspect heavy undercut but have no data
Titanium (sputtered)	BHF	PR	~3.33nm/s (order of magnitude estimate)	JULY 5, 2010	Geza		If you etch for >5min, cure PR at 115C for 15min prior to etch
Pd	Au etchant (TFA)	PR	~1.8nm/s	Oct 15, 2012	Geza		PR cured at 115 C for 5 min prior to etch, etch stops on InGaAs
Ta2O5	HF	no mask used	~100nm/s	JUNE 1, 2011	Geza
Sputtered W	H2O2 (20 C)	no mask used	~50 nm/min (~100 nm/min @ 50 C)	Nov 1, 2012	Geza		unpatterned samples etched fine (no bubbling), patterned samples did not etch (lots of bubbling)

Dielectric Deposit

Material	Equipment	Latest deposit rate	Latest update date	Latest update by	Calib. file	Note
SiN	PECVD
SiO2	PECVD
Ta2O5	Ebeam #2	1A/sec		Hui-Wen		Deposit 203nm on blank Si sample (do BHF dip before deposition), measure index and thickness on ellipsometer (Filmetrics is not good for this), calculate required thickness from index (http://optoelectronics.ece.ucsb.edu/oewiki/index.php/Simulation/multiFilm), deposit dielectric on both facets (one at a time). Generally need 203nm for 7 degree facets, Ta2O5 index ~2.0, purple color.
SrF2	Ebeam #2	2-5A/sec		Jon P		Per Je-Hyeong on Nov 16, 2010. Target 200 nm, measured 350 nm. Target 300 nm, measured 450 nm. For liftoff process only use 1165-ISO for liftoff because DI will dissolve SrF2 in 2-3 minutes.

Metal deposition

W deposition in Sputter 4 Report on film stress

Lithography

Equipment	Resist	Polarity	Hardmask	Substrate	Pre-Exposure Bake	Exposure Dose	Focus	Post-Exposure Bake	Development	Report	Author
Autostepper	SPR 955 0.9	Positive	200nm PECVD Oxide	GaAs (should work with Si, SOI, and InP also)	95C,90s	~.42s report variable	0	110C,90s	MIF726,40s	Over-exposure Pattern Reduction	Jock

Thermal oxidation

Dry/wet	Temperature	Material	File link
Wet	1050C	Si	File:Wetox 1050.xlsx