May 30 (Thu) @ 2:00pm: "High Power Nitrogen-polar GaN/InAlN HEMT with Record Power Density of 12.8 W/mm at 28 GHz," Shigeki Yoshida, Sumitomo Electric Industries, Ltd.

Abstract

Shigeki Yoshida is presenting record Ka-band power density from N-polar GaN HEMTs of 12.8 W/mm at 28 GHz, utilizing N-polar GaN/InAlN HEMTs.

Bio

Shigeki Yoshida received the B.E. and M.E. degrees in material engineering from the University of Tokyo, Tokyo, Japan, in 2012 and 2014, respectively.

In 2014, he joined Microwave Solid-State Engineering Dept. in Toshiba Corporation, Kawasaki, Japan, where he was engaged in research and development of GaN HEMT millimeter-wave devices.

In 2017, he moved to Transmission Devices laboratory in Sumitomo Electric Industries, Ltd., Yokohama, Japan, where he is currently researching and developing on novel RF devices as commercial devices.

Hosted by: Professor Umesh Mishra

Submitted by: Matthew Guidry <mguidry@ucsb.edu>