ECE Seminar Series – April 18 (Fri) 10:30 AM: "Compound Semiconductor Research and Development at Teledyne Scientific Co.," Berinder Brar, President, TSC

Location: Engineering Science Building (ESB), Room 1001
DISTINGUISHED LECTURE at the ECE SEMINAR SERIES

Abstract

Teledyne Scientific has a long legacy in compound semiconductor development dating back to the early 1970’s. The presentation will describe some of the key developments dating from the high-impact days of GaAs MESFETs and HBTs to today’s world-class InP HBTs and GaN HEMTs, highlighting the critical partnerships with universities along the way. The talk will review current challenges and highlight opportunities for further technology development.

Bio

Berinder “Bobby” Brar received his Ph.D in Electrical Engineering at UCSB in 1995, conducting research on the lnAs/AISb/GaSb semiconductor materials for high-speed electronic and optoelectronic applications. After completing his graduate work, he joined the Nanoelectronics branch in the Central Research Labs at Texas Instruments and worked on lnP- and Si-based resonant tunneling devices and field effect transistors for high-speed mixed-signal applications.  Dr. Brar joined the Teledyne Scientific Company in 1999 to manage the Advanced III-V Devices and Materials department.  Dr. Brar is presently the President of Teledyne Scientific Company, a technology leader in high performance compound semiconductor devices and integrated circuits, and high-performance imaging systems for military, space, astronomy, and commercial applications.  Dr. Brar has previously worked at R&D labs for Rockwell, Texas Instruments, and Raytheon.  Dr. Brar has published over 100 papers in conference proceedings and technical journals and has over 35 patents pending or awarded.

Hosted by: Distinguished Lecture at the ECE Seminar Series

Submitted by: Professor B.S. Manjunath <manj@ucsb.edu>